Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs

Journal
IEEE Transactions on Electron Devices
Date Issued
2017-10-01
Author(s)
Lin, Yen Kai
Kushwaha, Pragya
Chang, Huan Lin
Duarte, Juan Pablo
Sachid, Angada B.
Khandelwal, Sourabh
Salahuddin, Sayeef
Hu, Chenming
Subjects