Design and optimization of the performance of CsPbI<inf>3</inf> based vertical photodetector using SCAPS simulation

Photodetectors based on perovskite materials have shown excellent performance due to the significant properties of the material. Using the numerical simulation method, we can optimize the different layers of the device and thus can optimize the performance of the device. Numerous studies have been performed on the optimization of optoelectronic devices using numerical simulation methods. In this study, we have used the vertical structure photodetectors using perovskite materials as the light absorber layer to get an optimized high-performance photodetector using the 1D-Solar Cell Capacitance Simulator (SCAPS) software. After optimizing the thickness, doping and defect density of the absorber and charge transport layer, we get the maximum value of current density to be 19.63 mA/cm2 and the maximum Quantum Efficiency (QE) and spectral response value for incident light at 400 nm. Finally, using the standard light source, we have calculated the maximum value of responsivity and detectivity to be 0.4 A/W and 7.5 × 1010 Jones, respectively, at − 0.5 V.