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Reconfigurable Ferroelectric Electrostatic Doped Negative Capacitance Nanosheet Field-Effect Transistors with Enhanced I<inf>ON</inf>/I<inf>OFF</inf>and Scaled V<inf>DD</inf>< 0.45 V
Journal
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Date Issued
2022-01-01
Author(s)
Liu, Ning
Zhou, Jiuren
Zheng, Siying
Zhang, Hongrui
Yan, Qinyuan
Liang, Jie
Liu, Yan
Han, Genquan
Hao, Yue
Subjects