Flexible Forming Free Resistive Memory Device with 2D Material MoSe<inf>2</inf>as Switching Layer

Date Issued
2023-01-01
Author(s)
Saini, Shalu
Dwivedi, Anurag
Lodhi, Anil
Khandelwal, Arpit
Tiwari, Shree Prakash
DOI
10.1109/EDTM55494.2023.10103025
Abstract
In this paper, 2D MoSe2 is demonstrated as a promising active material for forming free flexible RRAM devices. Fabricated Ag/MoSe2/ITO flexible RRAM devices exhibited excellent resistive switching with very low SET/RESET voltages ∼ ± 1 V, high data retention > 104s, on/off current ratios of 102 to 103, and endurance for more than 100 cycles. These results indicate that MoSe2 can be a suitable switching layer candidate for high-performance RRAM devices for flexible and large area electronics.
Subjects