Fabrication process improvement of high isolation of RF MEMS switch for 5 G applications

For 5 G applications, isolation of better than −40 dB is required to prevent cross-talk between adjacent channels. Isolation of reported Radio Frequency (RF.) Microelectromechanical system (MEMS) switches lie in – 25 to −35 dB. A new improved fabrication process to improve the isolation of the Single Pole Single Throw (SPST) Radio Frequency (RF) switch is proposed in the present work. The measured resonant frequency of the switch is 24.50 GHz, matching the simulated value. The switch's measured insertion loss is better than −0.5 dB at the 24.50 GHz frequency band, which is very promising for 5 G applications. In the OFF state, the isolation of the switch is improved from −35.40 dB to −42.50 dB with an improved fabrication process without altering the switch parameters.