Exploration of Chitosan as an Active Material in Eco-friendly ReRAM Devices

In this paper, biomaterial chitosan was explored as a promising switching layer in resistive random access memory device fabricated on flexible polyethylene terephthalate substrate, with silver as top and gold as bottom electrode. These devices exhibited excellent bipolar resistive switching with low SET and RESET voltages. Though a very high retention of over 104s with high ON/OFF current ratio reaching to∼ 106 was observed from representative devices, a very high randomness was observed in cycle to cycle variation with order of ON/OFF current ratio varying significantly between 101 to 106, which needs further exploration for reliability. Even upon bending up to 7 mm radius, the devices maintained resistive switching behaviour. These results are very interesting considering the immense need of eco-friendly materials and devices for sustainable electronics.