Sensing demonstration and scalable production of nanostructured WO<inf>3</inf> FET

The domain of optoelectronics has wide scope and plays a major role in the design of smart electronics for real-world applications. In this paper we propose a WO3 based Field Effect Transistor (FET) device that functions as a phototransistor. The proposed device consists of 80 nm thin film of WO3 deposited using Radio Frequency (RF) sputter deposition technique. The synthesized material was characterized to investigate structural, morphological and optical properties. The fabricated FET exhibits ambipolar behaviour and it provides a great response for making a promising device for photo sensing applications. The proposed WO3-FET based phototransistor presents the photo-to-dark current ratio (PDCR) in the order of 10 under 650 nm illumination. Furthermore, the device shows repeatable results with higher stability. Additionally, the remarkable advantage proposed in this paper is the device being wafer scalable which increases the competence for mass manufacturing the devices.