Uncertainty Quantification of Memristor Crossbar Array for Vector Matrix Multiplication

This work focuses on the study of variability analysis of a memristor-based crossbar. The memristor crossbars are particularly useful in neuromorphic circuits due to their high power efficiency and low latency. This paper presents a variability analysis of the Roff to Ron ratio due to the change in the parameters of the crossbar cell. A single cell in the crossbar consists of one transistor one memristor (1T1M) based structure. The Zewail-city memristor model is used in the crossbar cell for the analysis. This paper also presents the analysis of the 1T1M structure and 1T1M based crossbar read-write operations. For variability analysis, a stochastic technique named Polynomial Chaos is used and the results are compared with the standard Monte Carlo simulations.