B-Doping-Enhanced Stability of Phosphorene/Graphene Heterostructures

Two-dimensional material heterostructures show large surface area and unusual electronic properties, being used in nanoelectronic devices, energy storage devices, and sensors. Doping can improve stability of the heterostructures. Structural and electronic properties of B–doped phosphorene/graphene heterostructures are studied using first-principles calculations. B doping in phosphorene enhances the interlayer charge transfer from phosphorene to graphene. Importantly, B doping creates strong chemical bonding at the interface, which improves stability of phosphorene/graphene heterostructures. The band gap is opened up to 0.53 eV by B doping.