Repository logo
  • English
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Svenska
  • Türkçe
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Log In
    or
    New user? Click here to register.Have you forgotten your password?
Repository logo
  • Communities & Collections
  • Research Outputs
  • Projects
  • People
  • Statistics
  • English
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Svenska
  • Türkçe
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Log In
    or
    New user? Click here to register.Have you forgotten your password?
  1. Home
  2. Scholalry Output
  3. Publications
  4. High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors
 
  • Details
Options

High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors

ISSN
07413106
Date Issued
2016-09-01
Author(s)
Bharti, Deepak
Raghuwanshi, Vivek
Varun, Ishan
Mahato, Ajay Kumar
Tiwari, Shree Prakash
DOI
10.1109/LED.2016.2592943
Abstract
High-performance solution processed flexible organic field-effect transistors with 6,13(bis-triisopropylsilylethynyl) pentacene and polystyrene blend are demonstrated with high electro-mechanical stability. For -5 V operation, field-effect mobility up to 1.1 cm2 V-1 s-1 and threshold voltage as low as -0.1 V were obtained with high current on-off ratios of ~ 105 due to high quality dielectric-semiconductor interface developed during solvent evaporation. Stable electrical characteristics were achieved with increasing duration of mechanical strain, and after multiple cycles of tensile and compressive strain. Drain current decay of 10%, very large trapping time of ~108 s, and a very small threshold voltage shift of 0.3 V were observed during bias stress of 1 h, signifying low charge carrier trapping and a high quality of dielectric-semiconductor interface, which was retained largely after two days of continuous tensile strain. Moreover, after 100 cycles of tensile and compressive strain, the corresponding shift in threshold voltage due to bias stress was still ~ 0.5 V. Overall, a high performance and stability were demonstrated under collective effects of mechanical and electrical stress.
Subjects
  • bending

  • bias-stress

  • flexible electronics

  • mechanical stability

  • Organic field-effect ...

  • TIPS-pentacene:polyme...

Copyright © 2016-2025  Indian Institute of Technology Jodhpur

Developed and maintained by Dr. Kamlesh Patel and Team, S. R. Ranganathan Learning Hub, IIT Jodhpur.

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Cookie settings
  • Privacy policy
  • End User Agreement
  • Send Feedback