Design Optimization Techniques in Nanosheet Transistor for RF Applications

ISSN
00189383
Date Issued
2020-10-01
Author(s)
Kushwaha, Pragya
Dasgupta, Avirup
Kao, Ming Yen
Agarwal, Harshit
Salahuddin, Sayeef
Hu, Chenming
DOI
10.1109/TED.2020.3019022
Abstract
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated TCAD simulations. The effects of stack spacing and number of stacks on device performance are studied and a substack design for improved RF performance is proposed. The novel substack design can improve cut-off frequency ( ${F}_{{t}}$ ) by 10% and minimum number of substacks and minimum substack spacing should be used.
Subjects