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Ultraviolet photodetector based on chemical vapor deposition grown MoO<inf>3</inf> microplates
Date Issued
2019-03-01
Author(s)
Kumar, Rahul
Goel, Neeraj
Kumar, Mahesh
DOI
10.1109/IEMECONX.2019.8876982
Abstract
Two-dimensional \alpha-MoO3 semiconductor material having wide band gap can be potentially used in a wide range of UV-light detection application. Here, we grown the large-scale film composed of \alpha-MoO3 microplates by using chemical vapor deposition process and fabricated a UV detector. The X-ray diffraction and Raman spectroscopy confirmed the continuity and crystallinity of the deposited MoO3 film on SiO2/Si substrate. The device exhibited a high responsivity of 500 mA/W and a photo/dark current ratio of over 6 and a significant fast response time under UV-light (360 nm) irradiation. An efficient UV-light detection of the MoO3 microplates can be attributed to the depletion-layer modulation process.