Bipolar resistive switching properties of TiO <inf>x</inf>/graphene oxide doped PVP based bilayer ReRAM

In this paper, firstly, some recently explored promising materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance are discussed. Further, resistive switching behaviour of TiO x /graphene oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated. It was found that bipolar resistive switching behaviour is significantly enhanced by embedding 2D material such as GO in the organic polymer acting as switching layer. ReRAM devices with Ag/PVP:GO/TiO x /fluorine doped tin oxide (FTO) structure exhibited high ON/OFF current ratio (>103), low voltage operation, and high retention time. Bipolar resistive switching from these engineered active layers will have great potential for future large area and sustainable electronics.