Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics

An improved compact model of high-voltage laterally diffused MOS (LDMOS) transistors valid over a wide temperature range including cryogenic is presented. The existing BSIM-BULK HV compact model is improved to include carrier freeze-out and field-assisted ionization models, which are key for the HV devices. In addition, temperature dependence of mobility, flat-band voltage, and saturation velocity models are also improved for application to cryogenic temperatures. The proposed model is implemented within the framework of the BSIM-BULK HV compact model and shows excellent capability in modeling experimental LDMOS transistor data for temperatures between 300 and 77 K.