Formation of hexagonal 9R silicon polytype by ion implantation

ISSN
10637850
Date Issued
2017-08-01
Author(s)
Korolev, D. S.
Nikolskaya, A. A.
Krivulin, N. O.
Belov, A. I.
Mikhaylov, A. N.
Pavlov, D. A.
Tetelbaum, D. I.
Sobolev, N. A.
Kumar, M.
DOI
10.1134/S1063785017080211
Abstract
Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.