Lamination of Flexible Organic Transistors on Fabric for E-Textile

Flexible organic field-effect transistors (OFETs) based on solution-processed TIPS-Pentacene as semiconductor and high-k P(VDF-TrFE) gate dielectric are successfully demonstrated on fabric for future electronic textile (e-textile) applications. These devices exhibited very high electrical performance with maximum (μmax) and average (μavg) field-effect mobility values of 1.2 and 0.5(±0.3) cm2·V-1·s-1, respectively, in the saturation regime and ION/IOFF of 103 for a low operating voltage of -5 V, along with excellent electromechanical stability. Furthermore, these devices showed excellent environmental stability with almost unchanged electrical characteristics for 26 weeks. Moreover, devices showed high cyclic stability with stable ON/ OFF switching characterized up to 500 cycles.