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  4. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states
 
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A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

ISSN
00036951
Date Issued
2016-06-06
Author(s)
Vyas, Giriraj
Dagar, Parveen
Sahu, Satyajit
DOI
10.1063/1.4953197
Abstract
We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.
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